JPH0122736B2 - - Google Patents

Info

Publication number
JPH0122736B2
JPH0122736B2 JP57002091A JP209182A JPH0122736B2 JP H0122736 B2 JPH0122736 B2 JP H0122736B2 JP 57002091 A JP57002091 A JP 57002091A JP 209182 A JP209182 A JP 209182A JP H0122736 B2 JPH0122736 B2 JP H0122736B2
Authority
JP
Japan
Prior art keywords
mos transistor
gate electrode
impurity diffusion
region
signal line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57002091A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58119648A (ja
Inventor
Hiroichi Ishida
Tatsuya Enomoto
Isao Ookura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57002091A priority Critical patent/JPS58119648A/ja
Publication of JPS58119648A publication Critical patent/JPS58119648A/ja
Publication of JPH0122736B2 publication Critical patent/JPH0122736B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP57002091A 1982-01-08 1982-01-08 半導体集積回路装置 Granted JPS58119648A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57002091A JPS58119648A (ja) 1982-01-08 1982-01-08 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57002091A JPS58119648A (ja) 1982-01-08 1982-01-08 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS58119648A JPS58119648A (ja) 1983-07-16
JPH0122736B2 true JPH0122736B2 (en]) 1989-04-27

Family

ID=11519673

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57002091A Granted JPS58119648A (ja) 1982-01-08 1982-01-08 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS58119648A (en])

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6025250A (ja) * 1983-07-21 1985-02-08 Nec Corp マスタスライス方式半導体集積回路
JPH0638468B2 (ja) * 1984-12-18 1994-05-18 三洋電機株式会社 半導体集積回路装置
JPH02280353A (ja) * 1989-04-20 1990-11-16 Nec Corp 半導体集積回路
JPH0466395U (en]) * 1990-10-22 1992-06-11
JP3965911B2 (ja) 1998-07-23 2007-08-29 セイコーエプソン株式会社 マスタースライス方式半導体集積回路の設計方法

Also Published As

Publication number Publication date
JPS58119648A (ja) 1983-07-16

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